Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.845496
Title: Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
Authors: Kang, F.J.
Yu, H.Y. 
Ren, C.
Wang, X.P.
Li, M.-F. 
Chan, D.S.H. 
Yeo, Y.-C. 
Sa, N.
Yang, H.
Liu, X.Y.
Han, R.Q.
Kwong, D.-L.
Keywords: HfO2 gate dielectric
Instability of Vth
Mobility
nMOS transistor
Sub-1-nm equivalent oxide thickness (EOT)
Issue Date: Apr-2005
Citation: Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L. (2005-04). Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process. IEEE Electron Device Letters 26 (4) : 237-239. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.845496
Abstract: By using a high-temperature gate-first process, HfN-HfO2-gated nMOSFET with 0.95-nm equivalent oxide thickness (EOT) was fabricated. The excellent device characteristics such as the sub-l-nm EOT, high electron effective mobility (peak value ∼ 232 cm2/V. s) and robust electrical stability under a positive constant voltage stress were achieved. These improved device performances achieved in the sub-l-nm HfN-HfO2-gated nMOSFETs could be attributed to the low interfacial and bulk traps charge density of HfO2 layer due to the 950 °C high-temperature source/ drain activation annealing process after deposition of the HfN-HfO2 gate stack. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82504
ISSN: 07413106
DOI: 10.1109/LED.2005.845496
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