Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.103
Title: Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Keywords: Gallium nitride
Hafnium oxide
HEMT
Passivation
Issue Date: 26-Mar-2007
Citation: Liu, C., Chor, E.F., Tan, L.S. (2007-03-26). Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation. Thin Solid Films 515 (10) : 4369-4372. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.103
Abstract: Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO2) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (ns) and electron mobility (μn) in the HfO2-passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher IDmax and an 18% higher gmmax in HEMTs with HfO2 passivation relative to the unpassivated devices. On the other hand, Igleak of the HEMTs decreases by nearly one order of magnitude when HfO2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO2-passivated HEMTs exhibit a much smaller off-state ID, indicating better turn-off characteristics. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82503
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.103
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