Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2167650
Title: Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
Authors: Tong, Y.
Zhou, Q. 
Chua, L.H.
Thanigaivelan, T.
Henry, T.
Yeo, Y.-C. 
Keywords: Carbon
Germanium
Ion implantation
Schottky diodes
Silicides
Issue Date: Dec-2011
Citation: Tong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C. (2011-12). Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant. IEEE Electron Device Letters 32 (12) : 1734-1736. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2167650
Abstract: This letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts. Ge and C PAI increases the threshold temperature for agglomeration of a NiSi film, thus enhancing its thermal stability. A presilicide S implant and its segregation at metal/semiconductor interface effectively lowers the effective electron SBH {B}n to 0.18 eV. In addition, the distribution of reverse current in the NiSi/n-type Si contact is improved with the introduction of Ge and C PAI. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82495
ISSN: 07413106
DOI: 10.1109/LED.2011.2167650
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