Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2091672
Title: III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
Authors: Chin, H.-C.
Gong, X.
Wang, L.
Lee, H.K.
Shi, L.
Yeo, Y.-C. 
Keywords: FinFET
high mobility
InGaAs
MOSFET
multiple-gate field-effect transistor (MuGFET)
retrograde well
Issue Date: Feb-2011
Source: Chin, H.-C., Gong, X., Wang, L., Lee, H.K., Shi, L., Yeo, Y.-C. (2011-02). III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin. IEEE Electron Device Letters 32 (2) : 146-148. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2091672
Abstract: We report an In0.7Ga0.3As n-channel multiplegate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga 0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 μA/ìm at VDS = 1.5 V and VGS . VT = 3 V. © 2010 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82490
ISSN: 07413106
DOI: 10.1109/LED.2010.2091672
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