Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848622
Title: High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
Authors: Hung, B.F.
Chiang, K.C.
Huang, C.C.
Chin, A. 
McAlister, S.P.
Keywords: High-Κ
LaAlO3
Thin-film transistors (TFTs)
Threshold voltage
Issue Date: Jun-2005
Citation: Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P. (2005-06). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric. IEEE Electron Device Letters 26 (6) : 384-386. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848622
Abstract: We have integrated a high-Κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved - such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-Κ dielectric. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82467
ISSN: 07413106
DOI: 10.1109/LED.2005.848622
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

48
checked on Dec 17, 2018

WEB OF SCIENCETM
Citations

45
checked on Dec 17, 2018

Page view(s)

39
checked on Dec 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.