High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848622

Title:	High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
Authors:	Hung, B.F. Chiang, K.C. Huang, C.C. Chin, A. McAlister, S.P.
Keywords:	High-Κ LaAlO3 Thin-film transistors (TFTs) Threshold voltage
Issue Date:	Jun-2005
Citation:	Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P. (2005-06). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric. IEEE Electron Device Letters 26 (6) : 384-386. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848622
Abstract:	We have integrated a high-Κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved - such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-Κ dielectric. © 2005 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82467
ISSN:	07413106
DOI:	10.1109/LED.2005.848622
Appears in Collections:	Staff Publications

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