Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2207368
Title: High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
Authors: Liu, B.
Gong, X.
Han, G. 
Lim, P.S.Y.
Tong, Y.
Zhou, Q. 
Yang, Y.
Daval, N.
Veytizou, C.
Delprat, D.
Nguyen, B.-Y.
Yeo, Y.-C. 
Keywords: Disilane passivation
germanium
Metal S/D
MuGFET
Issue Date: 2012
Citation: Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2012). High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack. IEEE Electron Device Letters 33 (10) : 1336-1338. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2207368
Abstract: We report high-performance p-channel $\Omega$-gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si{2}\hbox{H} 6 surface passivation and Schottky-barrier nickel germanide (NiGe) metallic source/drain, fabricated on high-quality germanium-on-insulator (GeOI) substrates using sub-400 $^{\circ}\hbox{C} $ process modules. As compared with other reported p-channel multigate Ge devices formed by top-down approaches, the Ge MuGFETs in this letter have a record-high on-state current $I \rm ON of $\sim \hbox{450}\ \mu\hbox{A}/\mu\hbox{m}$ at $V{\rm GS} -V{\rm TH} = -\hbox{1}\ \hbox{V}$ and $V{\rm DS} = -\hbox{1}\ \hbox{V}$. High peak intrinsic saturation transconductance of $\sim \hbox{740}\ \mu\hbox{S}/\mu\hbox{m}$ and low off-state current are reported. We also study the effect of fin or channel doping on Ge MuGFET performance. The simple MuGFET process developed using GeOI substrate would be a good reference for future 3-D Ge device fabrication. © 2012 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82464
ISSN: 07413106
DOI: 10.1109/LED.2012.2207368
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