Please use this identifier to cite or link to this item:
|Title:||Highly oriented Ni(Pd)SiGe formation at 400 °c|
|Citation:||Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H. (2005-05-15). Highly oriented Ni(Pd)SiGe formation at 400 °c. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository.|
|Abstract:||A germanosilicide technology employing Ni0.95Pd0.05 alloy to improve the germanosilicide film texture strucutre on relaxed Si1-xGex substrate has been developed. Highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y films where x=0.2, 0.25, 0.3, and y≈0.5 are obtained at 400 °C annealing with (200) as the preferred orientation, as was revealed by cross-sectional transmission electron microscopy and x-ray diffraction results. The formation of the highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y film can be explained by interface and surface energies minimization due to the addition of Pd. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 26, 2018
WEB OF SCIENCETM
checked on Dec 31, 2018
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.