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|Title:||Highly oriented Ni(Pd)SiGe formation at 400 °c|
|Citation:||Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H. (2005-05-15). Highly oriented Ni(Pd)SiGe formation at 400 °c. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository.|
|Abstract:||A germanosilicide technology employing Ni0.95Pd0.05 alloy to improve the germanosilicide film texture strucutre on relaxed Si1-xGex substrate has been developed. Highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y films where x=0.2, 0.25, 0.3, and y≈0.5 are obtained at 400 °C annealing with (200) as the preferred orientation, as was revealed by cross-sectional transmission electron microscopy and x-ray diffraction results. The formation of the highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y film can be explained by interface and surface energies minimization due to the addition of Pd. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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