Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2013.08.069
Title: Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition
Authors: Wong, L.M.
Chiam, S.Y.
Chim, W.K. 
Pan, J.S.
Wang, S.J.
Keywords: Aluminum zinc oxide
AZO PLD TCO
Polyethylene terephthalate
Pulsed laser deposition
Thickness dependence
Transparent conducting oxide
Issue Date: 31-Oct-2013
Citation: Wong, L.M., Chiam, S.Y., Chim, W.K., Pan, J.S., Wang, S.J. (2013-10-31). Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition. Thin Solid Films 545 : 285-290. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.08.069
Abstract: Highly transparent and conductive aluminum-doped zinc oxide thin films were deposited on low-cost flexible polyethylene terephthalate substrates at room temperature using pulsed laser deposition and the effects of oxygen pressure and film thickness on film properties were investigated.It was found that grain sizes play a greater role only at smaller film thicknesses in affecting carrier mobility.Resistivity changes at larger film thickness can be caused by near surface/interface depletion that affected both mobility and carrier concentration.The inherent film transparency did not change and any reduction in the film transmittance is likely related to a thickness dependent attenuation effect.This means that different transparent conducting oxides should each possess an optimum film thickness, whereby optimized zinc oxide is typically about 100 nm.A low resistivity of ∼ 6.6 × 10- 4 Ω cm with a high normalized transparency index of > 0.9 for a 110 ± 10 nm thick room-temperature deposited film was obtained, representing one of the best results obtained to date.© 2013 Elsevier B.V.All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82461
ISSN: 00406090
DOI: 10.1016/j.tsf.2013.08.069
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