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|Title:||High optical quality nanoporous GaN prepared by photoelectrochemical etching|
|Citation:||Vajpeyi, A.P., Chua, S.J., Tripathy, S., Fitzgerald, E.A., Liu, W., Chen, P., Wang, L.S. (2005). High optical quality nanoporous GaN prepared by photoelectrochemical etching. Electrochemical and Solid-State Letters 8 (4) : G85-G88. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1861037|
|Abstract:||Nanoporous GaN films are prepared by ultraviolet assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, microphotoluminescence, micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 75-85 nm. As compared to the starting as-grown GaN film, porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E 2 high phonon peak in the Raman spectrum of porous GaN. © 2005 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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