Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1861037
Title: High optical quality nanoporous GaN prepared by photoelectrochemical etching
Authors: Vajpeyi, A.P.
Chua, S.J. 
Tripathy, S.
Fitzgerald, E.A.
Liu, W.
Chen, P.
Wang, L.S.
Issue Date: 2005
Citation: Vajpeyi, A.P., Chua, S.J., Tripathy, S., Fitzgerald, E.A., Liu, W., Chen, P., Wang, L.S. (2005). High optical quality nanoporous GaN prepared by photoelectrochemical etching. Electrochemical and Solid-State Letters 8 (4) : G85-G88. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1861037
Abstract: Nanoporous GaN films are prepared by ultraviolet assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, microphotoluminescence, micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 75-85 nm. As compared to the starting as-grown GaN film, porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E 2 high phonon peak in the Raman spectrum of porous GaN. © 2005 The Electrochemical Society. All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82451
ISSN: 10990062
DOI: 10.1149/1.1861037
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