High optical quality nanoporous GaN prepared by photoelectrochemical etching

Abstract

Nanoporous GaN films are prepared by ultraviolet assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, microphotoluminescence, micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 75-85 nm. As compared to the starting as-grown GaN film, porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E 2 high phonon peak in the Raman spectrum of porous GaN. © 2005 The Electrochemical Society. All rights reserved.