Please use this identifier to cite or link to this item:
|Title:||High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates|
|Citation:||Gao, F., Balakumar, S., Balasubramanian, N., Lee, S.J., Tung, C.H., Kumar, R., Sudhiranjan, T., Foo, Y.L., Kwong, D.-L. (2005). High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates. Electrochemical and Solid-State Letters 8 (12) : G337-G340. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2087167|
|Abstract:||We report the fabrication of single-crystalline Si0.4Ge 0.6-on-insulator by oxidizing cosputtered amorphous SiGe film on silicon-on-insulator (SOI) substrates. After a two-step oxidation process, thin SiGe0.6-on-insulator (SGOI) film with a uniform Ge concentration has been achieved. Various defects were observed during condensation. Crystalline properties of the SGOI layers are investigated by micro-Raman technique. The anisotropy of the strain in the Si0.4Ge0.6 film is deconvolved by high-resolution X-ray diffraction measurements and the estimated Ge content closely matches with energy dispersive X-ray analysis in cross-sectional transmission electron microscopy. The overall strain in these SGOI films is beneficial for the improvement of hole mobility of the metal-oxide-semiconductor field effect transistors. A cyclic annealing step is found to be effective for improving the film quality of Si0.4Ge 0.6-on-insulator. Such a cost-effective and simple method is promising for fabricating high Ge-content strained SiGe-on-insulator and pure Ge-on-insulator structures for high mobility device applications. © 2005 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 20, 2018
WEB OF SCIENCETM
checked on Sep 5, 2018
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.