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|Title:||High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates|
|Citation:||Gao, F., Balakumar, S., Balasubramanian, N., Lee, S.J., Tung, C.H., Kumar, R., Sudhiranjan, T., Foo, Y.L., Kwong, D.-L. (2005). High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates. Electrochemical and Solid-State Letters 8 (12) : G337-G340. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2087167|
|Abstract:||We report the fabrication of single-crystalline Si0.4Ge 0.6-on-insulator by oxidizing cosputtered amorphous SiGe film on silicon-on-insulator (SOI) substrates. After a two-step oxidation process, thin SiGe0.6-on-insulator (SGOI) film with a uniform Ge concentration has been achieved. Various defects were observed during condensation. Crystalline properties of the SGOI layers are investigated by micro-Raman technique. The anisotropy of the strain in the Si0.4Ge0.6 film is deconvolved by high-resolution X-ray diffraction measurements and the estimated Ge content closely matches with energy dispersive X-ray analysis in cross-sectional transmission electron microscopy. The overall strain in these SGOI films is beneficial for the improvement of hole mobility of the metal-oxide-semiconductor field effect transistors. A cyclic annealing step is found to be effective for improving the film quality of Si0.4Ge 0.6-on-insulator. Such a cost-effective and simple method is promising for fabricating high Ge-content strained SiGe-on-insulator and pure Ge-on-insulator structures for high mobility device applications. © 2005 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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