Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2168227
Title: High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
Authors: Ding, S.-J.
Zhang, M.
Chen, W.
Zhang, D.W.
Wang, L.-K.
Wang, X.P.
Zhu, C. 
Li, M.-F. 
Issue Date: 2006
Citation: Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F. (2006). High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3. Applied Physics Letters 88 (4) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168227
Abstract: We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2 HfO2 - Al2 O3 nanolaminate (HAN) Al2 O3. The memory capacitor exhibits a high capacitance density of 4.5 fFμ m2, a large memory window of 1.45 V in the case of +12 V program-12 V erase for 5 ms, nearly symmetrical positive and negative flatband voltages under the program/erase operations with the same magnitudes of voltage and time, and no erase saturation. This is attributed to the fact that the introduction of atomic-layer-deposited high-dielectric-constant HAN Al2 O3 layers increases the electric field across the tunnel oxide and reduces that across the blocking layer, hence, preventing effectively Fowler-Nordheim tunneling current through the blocking layer. Additionally, we find that the HAN is a promising charge storage layer with sufficient trapping centers for electrons and holes. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82447
ISSN: 00036951
DOI: 10.1063/1.2168227
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