Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3465445
Title: Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells
Authors: Wong, L.M.
Chiam, S.Y.
Huang, J.Q.
Wang, S.J.
Pan, J.S.
Chim, W.K. 
Issue Date: 1-Aug-2010
Source: Wong, L.M., Chiam, S.Y., Huang, J.Q., Wang, S.J., Pan, J.S., Chim, W.K. (2010-08-01). Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells. Journal of Applied Physics 108 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3465445
Abstract: Cu2O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium tin oxide (ITO) coated glass at room temperature. The effect of oxygen partial pressure on the structures and properties of Cu2O thin films are investigated. We show that oxygen partial pressure is a crucial parameter in achieving pure phases of CuO and Cu2O. Based on this finding, we fabricate heterojunctions of p-type Cu2O with n-type gallium doped ZnO (GZO) on ITO coated glass substrates by pulsed laser deposition for GZO thin films. The energy band alignment for thin films of Cu2O/GZO on ITO glass is characterized using high-resolution x-ray photoelectron spectroscopy. The energy band alignment for the Cu2O/GZO heterojunctions is determined to be type II with a valence band offset of 2.82 eV and shows negligible effects of variation with gallium doping. The higher conduction band of the Cu2O relative to that of GZO in the obtained band alignment shows that the heterojunctions are suitable for solar cell application based on energy levels consideration. © 2010 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82433
ISSN: 00218979
DOI: 10.1063/1.3465445
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