Please use this identifier to cite or link to this item: https://doi.org/10.1007/s003390100881
Title: Growth and characterization of silicon nitride films on various underlying materials
Authors: Han, G.C. 
Luo, P.
Li, K.B.
Liu, Z.Y.
Wu, Y.H. 
Issue Date: Feb-2002
Citation: Han, G.C., Luo, P., Li, K.B., Liu, Z.Y., Wu, Y.H. (2002-02). Growth and characterization of silicon nitride films on various underlying materials. Applied Physics A: Materials Science and Processing 74 (2) : 243-247. ScholarBank@NUS Repository. https://doi.org/10.1007/s003390100881
Abstract: Characteristics of silicon nitride (SiNx:H) films, grown by plasma enhanced chemical vapor deposition (PECVD) on various metals such as Ta, IrMn, NiFe, Cu, and CoFe at various temperatures down to 100°C, were studied using measurements of BHF etch rate, surface roughness and Auger electron spectroscopy (AES). The results were compared with those obtained for SiNx:H films on Si. The deposition rate of SiNx:H films increased slightly as deposition temperature decreased, and showed a weak dependence on the underlying materials. The surface of the nitride films deposited on all underlying materials at lower temperatures (below 150°C) became rougher. In particular, a bubble-like surface was observed on the nitride film deposited on NiFe at 100°C. At higher deposition temperatures (above 200°C), SiNx:H films on all the above metals had small RMS values, except for films on Cu which cracked at 250°C. BHF (10: 1) etch rate increased dramatically for nitride films deposited below 150°C. For different underlying films, the BHF etch rate was quite different, but exhibited the same trend with decrease in deposition temperature. AES measurements showed that Si and N concentrations in the SiNx:H films were only slightly different for the various deposition temperatures and underlying materials. AES depth profile of nitride films indicated that both surface O content and the depth of oxygen penetrating into SiNx:H increased for low temperature-deposited films. However, there was no observed oxygen signal from within the films, even for films deposited at 100°C, and both Si and N concentrations were uniform throughout the film.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/82431
ISSN: 09478396
DOI: 10.1007/s003390100881
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