Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2013.2287031
Title: Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
Authors: Yang, Y.
Han, G.
Guo, P.
Wang, W.
Gong, X.
Wang, L.
Low, K.L.
Yeo, Y.-C. 
Keywords: Band-to-band tunneling
direct bandgap
germanium-tin
p-channel tunneling field-effect transistor (p-TFET)
Issue Date: Dec-2013
Citation: Yang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C. (2013-12). Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration. IEEE Transactions on Electron Devices 60 (12) : 4048-4056. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2287031
Abstract: We report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms of on-state current (I-{on}). With the incorporation of Sn, the conduction band minima at \Gamma-point of GeSn alloy shift down, increasing the direct band-to-band tunneling (BTBT) generation rate at the source-channel tunneling junction in TFET. In addition, n-type dopant activation temperature of below 400^{\circ}{\rm C} can be used in GeSn, which is much lower than that in Ge (700^{\circ}{\rm C} ). Therefore, n-type dopant diffusion in GeSn is suppressed leading to an abrupt {\rm n}+ tunneling junction that is favorable for the source junction of a p-TFET. Lateral {\rm Ge}-{0.958}{\rm Sn} 0.042 p-TFETs were fabricated and high Ion of 29 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-2~{\rm V} and 4.34 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-1~{\rm V} is achieved. © 2013 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82418
ISSN: 00189383
DOI: 10.1109/TED.2013.2287031
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