Please use this identifier to cite or link to this item:
|Title:||Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate|
|Authors:||Zhu, S. |
|Citation:||Zhu, S., Li, R., Lee, S.J., Li, M.F., Du, A., Singh, J., Zhu, C., Chin, A., Kwong, D.L. (2005-02). Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate. IEEE Electron Device Letters 26 (2) : 81-83. ScholarBank@NUS Repository.|
|Abstract:||Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. © 2005 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 27, 2018
WEB OF SCIENCETM
checked on Dec 31, 2018
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.