Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BF06
Title: Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
Authors: Guo, H.X.
Kong, E.Y.J.
Zhang, X.
Yeo, Y.-C. 
Issue Date: Feb-2012
Citation: Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C. (2012-02). Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF06
Abstract: We investigate a solid state reaction between Ge and Ni-InGaAs on n + In 0.53Ga 0.47As and its effects on the contact resistance of Ni-based contacts on InGaAs. This reaction was performed by isochronous annealing of Ge on Ni-InGaAs at temperatures ranging from 400 to 600°C inN 2 ambient. It was found that a regrown InGaAs layer rich in Ge was formed below the metal contact. Compared with Ni-InGaAs contact, more than 60% reduction in contact resistance on Si-implanted n-In 0.53Ga 0.47As was achieved after annealing at 600°C. This contact structure was characterized by secondary ion mass spectroscopy, high resolution transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. © 2012 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82403
ISSN: 00214922
DOI: 10.1143/JJAP.51.02BF06
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