Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2749840
Title: GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation
Authors: Gao, F.
Lee, S.J. 
Chi, D.Z.
Balakumar, S.
Kwong, D.-L.
Issue Date: 2007
Citation: Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L. (2007). GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters 90 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749840
Abstract: Oxides induced Fermi level pinning at the interface between the GaAs and high-k gate dielectric is a major obstacle for developing high performance GaAs metal-oxide-semiconductor (MOS) devices. In this letter, thermal nitridation treatment on GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. It is found that an optimized nitride layer formed during the thermal nitridation surface treatment can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and HfO2. By using thermal nitridation treatment and in situ metal-organic chemical vapor deposition HfO2 as high-k gate dielectric, GaAs MOS capacitor with improved capacitance-voltage characteristics and reduced gate leakage current is achieved. ©2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82396
ISSN: 00036951
DOI: 10.1063/1.2749840
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