Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812569
Title: Fully silicided NiSi gate on La2O3 MOSFETs
Authors: Lin, C.Y.
Ma, M.W.
Chin, A.
Yeo, Y.C. 
Zhu, C. 
Li, M.F. 
Kwong, D.-L.
Keywords: CoSi2
La2O3
MOSFET
NiSi
Issue Date: May-2003
Source: Lin, C.Y., Ma, M.W., Chin, A., Yeo, Y.C., Zhu, C., Li, M.F., Kwong, D.-L. (2003-05). Fully silicided NiSi gate on La2O3 MOSFETs. IEEE Electron Device Letters 24 (5) : 348-350. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812569
Abstract: We have fabricated the fully silicided NiSi on La2O3 for n- and p-MOSFETs. For 900°C fully silicided CoSi2 on La2O3 gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2 × 10-4 A/cm2 at 1 V is measured for 400°C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm2/V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO2 MOSFETs without using H2 annealing.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82391
ISSN: 07413106
DOI: 10.1109/LED.2003.812569
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