Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.819274
Title: Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs
Authors: Yu, D.S.
Wu, C.H.
Huang, C.H.
Chin, A.
Chen, W.J.
Zhu, C. 
Li, M.F. 
Kwong, D.-L.
Keywords: MOSFET
NiGe
NiSi
Issue Date: Dec-2003
Citation: Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Zhu, C., Li, M.F., Kwong, D.-L. (2003-12). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs. IEEE Electron Device Letters 24 (12) : 739-741. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819274
Abstract: We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82390
ISSN: 07413106
DOI: 10.1109/LED.2003.819274
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