Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1767597
Title: Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device
Authors: Wang, Y.Q.
Chen, J.H. 
Yoo, W.J. 
Yeo, Y.-C. 
Kim, S.J. 
Gupta, R.
Tan, Z.Y.L.
Kwong, D.-L.
Du, A.Y.
Balasubramanian, N.
Issue Date: 28-Jun-2004
Citation: Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Kim, S.J., Gupta, R., Tan, Z.Y.L., Kwong, D.-L., Du, A.Y., Balasubramanian, N. (2004-06-28). Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device. Applied Physics Letters 84 (26) : 5407-5409. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1767597
Abstract: The formation of Ge nanocrystals in HfAlO high-k dielectric by co-sputtering of HfO 2, Al 2O 3 and GE was demonstrated. It was observed that using a high-k dielectric, NCs flash memory can achieve improving programming efficiency and data retention. The results show that Ge NCs were thermally stable in HfAlO matrix. A fabrication of a nonvolatile memory device employing Ge NCs embedded in HfAlO hihg-k dielectric shows an excellent memory effects.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82374
ISSN: 00036951
DOI: 10.1063/1.1767597
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

52
checked on Jun 19, 2018

WEB OF SCIENCETM
Citations

51
checked on Jun 12, 2018

Page view(s)

41
checked on May 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.