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|Title:||Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device|
|Citation:||Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Kim, S.J., Gupta, R., Tan, Z.Y.L., Kwong, D.-L., Du, A.Y., Balasubramanian, N. (2004-06-28). Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device. Applied Physics Letters 84 (26) : 5407-5409. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1767597|
|Abstract:||The formation of Ge nanocrystals in HfAlO high-k dielectric by co-sputtering of HfO 2, Al 2O 3 and GE was demonstrated. It was observed that using a high-k dielectric, NCs flash memory can achieve improving programming efficiency and data retention. The results show that Ge NCs were thermally stable in HfAlO matrix. A fabrication of a nonvolatile memory device employing Ge NCs embedded in HfAlO hihg-k dielectric shows an excellent memory effects.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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