Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.899763
Title: Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
Authors: Jiang, Y.
Loh, W.Y.
Chan, D.S.H. 
Xiong, Y.Z.
Ren, C.
Lim, Y.F.
Lo, G.Q.
Kwong, D.-L.
Keywords: Electrical stress
Flicker noise
Interface traps
Si/SiGe dual-quantum well (DQW)
Issue Date: Jul-2007
Citation: Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L. (2007-07). Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well. IEEE Electron Device Letters 28 (7) : 603-605. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.899763
Abstract: This letter reports on the low-frequency flicker-noise characteristics in fresh and electrically stressed pMOSFETs with thin strained-Si (∼4 nm)/Si0.6Ge0.4 (∼4 nm) dual-quantum-well (DQW) channel architectures. Normalized power spectral density (NPSD) of Id fluctuations (SID/ Id 2) in fresh DQW devices exhibits significant improvement (by > 102×) due to buried channel operation at low Vg. At high Vg, the NPSD enhancement reduces as carriers populate in the parasitic surface channel. Upon electrical stress, noise behavior in DQW devices was found to evolve from being carrier number-fluctuation dominated to mobility-fluctuation dominated. This was accompanied by the observation of a "less-distinct" buried-channel operation, indicating a potential stability issue of the Si/SiGe structure. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82368
ISSN: 07413106
DOI: 10.1109/LED.2007.899763
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