Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.mee.2009.03.075
DC Field | Value | |
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dc.title | Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper) | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Chang, M.F. | |
dc.contributor.author | Lin, S.H. | |
dc.contributor.author | Chen, W.B. | |
dc.contributor.author | Lee, P.T. | |
dc.contributor.author | Yeh, F.S. | |
dc.contributor.author | Liao, C.C. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Su, N.C. | |
dc.contributor.author | Wang, S.J. | |
dc.date.accessioned | 2014-10-07T04:28:31Z | |
dc.date.available | 2014-10-07T04:28:31Z | |
dc.date.issued | 2009-07 | |
dc.identifier.citation | Chin, A., Chang, M.F., Lin, S.H., Chen, W.B., Lee, P.T., Yeh, F.S., Liao, C.C., Li, M.-F., Su, N.C., Wang, S.J. (2009-07). Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper). Microelectronic Engineering 86 (7-9) : 1728-1732. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.03.075 | |
dc.identifier.issn | 01679317 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82366 | |
dc.description.abstract | The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6-1.2 nm EOT. Crown Copyright © 2009. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.mee.2009.03.075 | |
dc.source | Scopus | |
dc.subject | CMOS | |
dc.subject | EOT | |
dc.subject | High-κ | |
dc.subject | Metal-gate | |
dc.subject | Vfb roll-off | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.mee.2009.03.075 | |
dc.description.sourcetitle | Microelectronic Engineering | |
dc.description.volume | 86 | |
dc.description.issue | 7-9 | |
dc.description.page | 1728-1732 | |
dc.description.coden | MIENE | |
dc.identifier.isiut | 000267460100053 | |
Appears in Collections: | Staff Publications |
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