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|Title:||Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)|
|Citation:||Chin, A., Chang, M.F., Lin, S.H., Chen, W.B., Lee, P.T., Yeh, F.S., Liao, C.C., Li, M.-F., Su, N.C., Wang, S.J. (2009-07). Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper). Microelectronic Engineering 86 (7-9) : 1728-1732. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.03.075|
|Abstract:||The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6-1.2 nm EOT. Crown Copyright © 2009.|
|Source Title:||Microelectronic Engineering|
|Appears in Collections:||Staff Publications|
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