Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mee.2009.03.075
Title: Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)
Authors: Chin, A.
Chang, M.F.
Lin, S.H.
Chen, W.B.
Lee, P.T.
Yeh, F.S.
Liao, C.C.
Li, M.-F. 
Su, N.C.
Wang, S.J.
Keywords: CMOS
EOT
High-κ
Metal-gate
Vfb roll-off
Issue Date: Jul-2009
Source: Chin, A., Chang, M.F., Lin, S.H., Chen, W.B., Lee, P.T., Yeh, F.S., Liao, C.C., Li, M.-F., Su, N.C., Wang, S.J. (2009-07). Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper). Microelectronic Engineering 86 (7-9) : 1728-1732. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.03.075
Abstract: The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6-1.2 nm EOT. Crown Copyright © 2009.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/82366
ISSN: 01679317
DOI: 10.1016/j.mee.2009.03.075
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