Please use this identifier to cite or link to this item:
|Title:||Ferromagnetism and anomalous Hall effect in CoxGe1-x|
|Citation:||Ko, V., Teo, K.L., Liew, T., Chong, T.C. (2006). Ferromagnetism and anomalous Hall effect in CoxGe1-x. Applied Physics Letters 89 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2236266|
|Abstract:||We report the growth of Co-doped Ge (CoxGe1-x) thin films by low-temperature molecular-beam epitaxy and the ferromagnetic properties without any additional carrier doping. The as-grown Co0.02Ge 0.98 has a Curie temperature, Tc-15 K, while those Co xGe1-x with x≥4.0 at. % are ferromagnetic above room temperature. On the other hand, Co0.02Ge0.98 exhibit ferromagnetic ordering up to Tc-150±10 K after a low-temperature annealing. A redshift in the Raman Ge-Ge mode was observed, indicating the substitution of Ge with Co atoms. The measured Co 0.02Ge0.98 are of p type and exhibit pronounced anomalous Hall effects. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 19, 2018
WEB OF SCIENCETM
checked on Sep 10, 2018
checked on Aug 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.