Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2236266
Title: Ferromagnetism and anomalous Hall effect in CoxGe1-x
Authors: Ko, V.
Teo, K.L. 
Liew, T. 
Chong, T.C. 
Issue Date: 2006
Citation: Ko, V., Teo, K.L., Liew, T., Chong, T.C. (2006). Ferromagnetism and anomalous Hall effect in CoxGe1-x. Applied Physics Letters 89 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2236266
Abstract: We report the growth of Co-doped Ge (CoxGe1-x) thin films by low-temperature molecular-beam epitaxy and the ferromagnetic properties without any additional carrier doping. The as-grown Co0.02Ge 0.98 has a Curie temperature, Tc-15 K, while those Co xGe1-x with x≥4.0 at. % are ferromagnetic above room temperature. On the other hand, Co0.02Ge0.98 exhibit ferromagnetic ordering up to Tc-150±10 K after a low-temperature annealing. A redshift in the Raman Ge-Ge mode was observed, indicating the substitution of Ge with Co atoms. The measured Co 0.02Ge0.98 are of p type and exhibit pronounced anomalous Hall effects. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82357
ISSN: 00036951
DOI: 10.1063/1.2236266
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