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|Title:||Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopy|
|Citation:||Fang, L.W.-W., Zhao, R., Pan, J., Zhang, Z., Shi, L., Chong, T.-C., Yeo, Y.-C. (2009). Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopy. Applied Physics Letters 95 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3263953|
|Abstract:||The metal/ α - Ge2 Sb2 Te5 interface was examined using x-ray photoelectron spectroscopy. Doping Ge2 Sb2 Te5 with nitrogen leads to an increase in hole barrier height at the interface between metals and nitrogen-doped Ge2 Sb2 Te5. Hole barrier height at metal/ α - Ge 2 Sb2 Te5 interface is reduced slightly by increasing the work function of the metal. We observed significant pinning of metal Fermi level toward the valence band energy of undoped or nitrogen-doped Ge2 Sb2 Te5. This leads to low hole barrier height and good Ohmic contact formed between metals and α - Ge2 Sb2 Te5. © 2009 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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