Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4762003
Title: Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe 2 using pulsed laser anneal
Authors: Shi Ya Lim, P.
Zhi Chi, D.
Cai Wang, X.
Yeo, Y.-C. 
Issue Date: 22-Oct-2012
Citation: Shi Ya Lim, P., Zhi Chi, D., Cai Wang, X., Yeo, Y.-C. (2012-10-22). Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe 2 using pulsed laser anneal. Applied Physics Letters 101 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4762003
Abstract: A reduced effective electron Schottky barrier height Φ B n,eff of 0.37 eV is obtained at the epitaxial-NiGe 2/Ge(100) interface. This is substantially lower than an Φ B n,eff of 0.60 eV obtained at the NiGe/Ge(100) interface. The Fermi-level pinning effect, which is commonly observed between metals and Ge, is reduced at the NiGe 2/Ge(100) interface. This is attributed to the formation of epitaxial NiGe 2 on Ge(100), which is expected to have a lower density of interface states due to reduced number of dangling bonds. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82352
ISSN: 00036951
DOI: 10.1063/1.4762003
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