Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.857684
Title: Fast DNBTI components in p-MOSFET with SiON dielectric
Authors: Yang, T.
Shen, C.
Li, M.F. 
Ang, C.H.
Zhu, C.X. 
Yeo, Y.-C. 
Samudra, G. 
Rustagi, S.C.
Yu, M.B.
Kwong, D.-L.
Keywords: Dynamic negative biased temperature instability (DNBTI)
MOSFETs
SiON
Issue Date: Nov-2005
Source: Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.-L. (2005-11). Fast DNBTI components in p-MOSFET with SiON dielectric. IEEE Electron Device Letters 26 (11) : 826-828. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857684
Abstract: For the first time, we perform a systematic investigation of the fast components of dynamic negative biased temperature instability (DNBTI) in p-MOSFET with an ultrathin SiON gate dielectric. Experimental results unambiguously show a fast DNBTI component measured by a recently developed fast measurement method, and this component is due to trapping and detrapping of hole traps Not in SiON. The cumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experimental data. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82346
ISSN: 07413106
DOI: 10.1109/LED.2005.857684
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