Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2013.09.004
Title: Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application
Authors: Duttagupta, S.
Ma, F.-J. 
Hoex, B. 
Aberle, A.G. 
Keywords: Boron doped p+ emitters
Crystalline silicon
Plasma-enhanced chemical vapor deposition
Silicon oxide/Silicon nitride dielectric stacks
Surface passivation
Issue Date: 2014
Citation: Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G. (2014). Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application. Solar Energy Materials and Solar Cells 120 (PART A) : 204-208. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2013.09.004
Abstract: The passivation of p+ Si surfaces is challenging due to the fact that most passivation films have an intrinsically high positive fixed charge. In this work we show experimentally that low-temperature plasma-enhanced chemical vapor deposited SiOx/SiNy stacks with a low positive fixed charge density (+1011 cm-2) and very low interface defect density (~3×1010 eV-1 cm -2) as measured by contactless corona-voltage measurements can effectively passivate p+ surfaces resulting in emitter saturation current density (J0e) values of 25 and 45 fA/cm2 on planar and textured 75 /sq p+ silicon after industrial firing with a set-temperature of ~800 C, respectively. Based on contactless corona-voltage measurements and advanced device simulations, we explain the mechanism of surface passivation by PECVD SiOx/SiNy dielectric stack to be completely dominated by chemical passivation rather than field-effect passivation. Furthermore, from advanced device simulations we illustrate the role of fixed charge in surface passivation and in the extraction of fundamental surface recombination velocity parameter for p+ silicon surfaces. The fundamental surface recombination velocity parameter for electrons is determined to be about 400 cm/s at these c-Si/SiOx interfaces. With excellent optical and passivation properties, SiOx/SiNy dielectric stacks are suitable for high-efficiency and cost-effective industrial n-type silicon wafer solar cells. © 2013 Elsevier B.V.
Source Title: Solar Energy Materials and Solar Cells
URI: http://scholarbank.nus.edu.sg/handle/10635/82313
ISSN: 09270248
DOI: 10.1016/j.solmat.2013.09.004
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