Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/46/38/385102
Title: Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation
Authors: Liao, B.
Stangl, R.
Ma, F. 
Mueller, T.
Lin, F. 
Aberle, A.G. 
Bhatia, C.S. 
Hoex, B. 
Issue Date: 25-Sep-2013
Source: Liao, B., Stangl, R., Ma, F., Mueller, T., Lin, F., Aberle, A.G., Bhatia, C.S., Hoex, B. (2013-09-25). Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation. Journal of Physics D: Applied Physics 46 (38) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/46/38/385102
Abstract: We demonstrate that by using a water (H2O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al2O3) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s-1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2O3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100-400 °C range and peak firing temperatures of about 800°C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance-voltage measurements reveal that the negative fixed charge density near the AlOx/c-Si interface increases from 1.4 × 1012 to 3.3 × 1012 cm-2 due to firing, while the midgap interface defect density reduces from 3.3 × 1011 to 0.8 × 1011 cm-2 eV-1. This work demonstrates that direct firing activation of thermal ALD Al2O3 is feasible, which could be beneficial for solar cell manufacturing. © 2013 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82311
ISSN: 00223727
DOI: 10.1088/0022-3727/46/38/385102
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Mar 29, 2018

Page view(s)

56
checked on Mar 9, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.