Please use this identifier to cite or link to this item:
https://doi.org/10.1002/pip.1259
DC Field | Value | |
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dc.title | Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor | |
dc.contributor.author | Duttagupta, S. | |
dc.contributor.author | Lin, F. | |
dc.contributor.author | Shetty, K.D. | |
dc.contributor.author | Aberle, A.G. | |
dc.contributor.author | Hoex, B. | |
dc.date.accessioned | 2014-10-07T04:27:52Z | |
dc.date.available | 2014-10-07T04:27:52Z | |
dc.date.issued | 2013-06 | |
dc.identifier.citation | Duttagupta, S., Lin, F., Shetty, K.D., Aberle, A.G., Hoex, B. (2013-06). Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor. Progress in Photovoltaics: Research and Applications 21 (4) : 760-764. ScholarBank@NUS Repository. https://doi.org/10.1002/pip.1259 | |
dc.identifier.issn | 10627995 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82310 | |
dc.description.abstract | Excellent passivation of boron emitters is realised using AlO x/SiNx dielectric stacks deposited in an industrial inline plasma-enhanced chemical vapour deposition reactor. Very low emitter saturation current density (J0e) values of 10 and 45 fA/cm2 are obtained for 180 and 30 Ω/sq planar p+ emitters, respectively. For textured p+ emitters, the J0e was found to be 1.5-2 times higher compared with planar emitters. The required thermal activation of the AlOx films is performed in a standard industrial fast-firing furnace, making the developed passivation stack industrially viable. We also show that an AlOx thickness of 5 nm in the AlOx/SiN x stack is sufficient for obtaining a J0e of 18 fA/cm 2 for planar 80 Ω/sq p+ emitters, which corresponds to a 1-sun open-circuit voltage limit of the solar cell of 736 mV at 25 °C. Copyright © 2012 John Wiley & Sons, Ltd. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pip.1259 | |
dc.source | Scopus | |
dc.subject | boron emitter | |
dc.subject | crystalline silicon | |
dc.subject | industrial inline PECVD reactor | |
dc.subject | large-area high-efficiency Si wafer solar cells | |
dc.subject | PECVD aluminium oxide | |
dc.subject | surface passivation | |
dc.type | Article | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1002/pip.1259 | |
dc.description.sourcetitle | Progress in Photovoltaics: Research and Applications | |
dc.description.volume | 21 | |
dc.description.issue | 4 | |
dc.description.page | 760-764 | |
dc.description.coden | PPHOE | |
dc.identifier.isiut | 000319425900037 | |
Appears in Collections: | Staff Publications |
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