Please use this identifier to cite or link to this item: https://doi.org/10.1002/pip.1259
Title: Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor
Authors: Duttagupta, S.
Lin, F. 
Shetty, K.D.
Aberle, A.G. 
Hoex, B. 
Keywords: boron emitter
crystalline silicon
industrial inline PECVD reactor
large-area high-efficiency Si wafer solar cells
PECVD aluminium oxide
surface passivation
Issue Date: Jun-2013
Source: Duttagupta, S., Lin, F., Shetty, K.D., Aberle, A.G., Hoex, B. (2013-06). Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor. Progress in Photovoltaics: Research and Applications 21 (4) : 760-764. ScholarBank@NUS Repository. https://doi.org/10.1002/pip.1259
Abstract: Excellent passivation of boron emitters is realised using AlO x/SiNx dielectric stacks deposited in an industrial inline plasma-enhanced chemical vapour deposition reactor. Very low emitter saturation current density (J0e) values of 10 and 45 fA/cm2 are obtained for 180 and 30 Ω/sq planar p+ emitters, respectively. For textured p+ emitters, the J0e was found to be 1.5-2 times higher compared with planar emitters. The required thermal activation of the AlOx films is performed in a standard industrial fast-firing furnace, making the developed passivation stack industrially viable. We also show that an AlOx thickness of 5 nm in the AlOx/SiN x stack is sufficient for obtaining a J0e of 18 fA/cm 2 for planar 80 Ω/sq p+ emitters, which corresponds to a 1-sun open-circuit voltage limit of the solar cell of 736 mV at 25 °C. Copyright © 2012 John Wiley & Sons, Ltd.
Source Title: Progress in Photovoltaics: Research and Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/82310
ISSN: 10627995
DOI: 10.1002/pip.1259
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