Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4768932
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dc.titleEvolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces
dc.contributor.authorAnnadi, A.
dc.contributor.authorPutra, A.
dc.contributor.authorSrivastava, A.
dc.contributor.authorWang, X.
dc.contributor.authorHuang, Z.
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorVenkatesan, T.
dc.contributor.authorAriando
dc.date.accessioned2014-10-07T04:27:51Z
dc.date.available2014-10-07T04:27:51Z
dc.date.issued2012-12-03
dc.identifier.citationAnnadi, A., Putra, A., Srivastava, A., Wang, X., Huang, Z., Liu, Z.Q., Venkatesan, T., Ariando (2012-12-03). Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4768932
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82309
dc.description.abstractWe report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4768932
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDEAN'S OFFICE (ENGINEERING)
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4768932
dc.description.sourcetitleApplied Physics Letters
dc.description.volume101
dc.description.issue23
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000312243900016
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