Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4768932
DC Field | Value | |
---|---|---|
dc.title | Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces | |
dc.contributor.author | Annadi, A. | |
dc.contributor.author | Putra, A. | |
dc.contributor.author | Srivastava, A. | |
dc.contributor.author | Wang, X. | |
dc.contributor.author | Huang, Z. | |
dc.contributor.author | Liu, Z.Q. | |
dc.contributor.author | Venkatesan, T. | |
dc.contributor.author | Ariando | |
dc.date.accessioned | 2014-10-07T04:27:51Z | |
dc.date.available | 2014-10-07T04:27:51Z | |
dc.date.issued | 2012-12-03 | |
dc.identifier.citation | Annadi, A., Putra, A., Srivastava, A., Wang, X., Huang, Z., Liu, Z.Q., Venkatesan, T., Ariando (2012-12-03). Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4768932 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82309 | |
dc.description.abstract | We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T-1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers. © 2012 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4768932 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | DEAN'S OFFICE (ENGINEERING) | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.4768932 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 101 | |
dc.description.issue | 23 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000312243900016 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.