Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2004.838447
Title: Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET
Authors: Ang, D.S.
Liao, H.
Phua, T.W.H.
Ling, C.H. 
Keywords: Charge pumping current
High-energy tail (HET) electrons
Hot-carrier-induced degradation
Substrate-enhanced gate current
Issue Date: Dec-2004
Citation: Ang, D.S., Liao, H., Phua, T.W.H., Ling, C.H. (2004-12). Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFET. IEEE Transactions on Electron Devices 51 (12) : 2246-2248. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.838447
Abstract: Results from channel hot-electron stressing of 0.18-μm n-MOSFETs indicate that, for typical drain stress voltages ranging from 2-3 V, a significant fraction of the Si-SiO2 interface states is in fact generated by the majority of the less energetic (∞lt;qV d < 3 eV) electrons in the channel, as opposed to the usual perception that injection of the more energetic (> 3 eV) high-energy tail (HET) electrons plays a dominant role. The role of the minority HET electrons, however, becomes increasingly dominant as the drain voltage is reduced. On the basis that the HET electrons gain excess energy through secondary means, this composite interface state generation mode may have a significant impact on the accuracy of hot-carrier reliability projection. © 2004 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82304
ISSN: 00189383
DOI: 10.1109/TED.2004.838447
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