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|Title:||Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations|
|Authors:||Wang, J. |
|Citation:||Wang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Loh, T.H., Yu, M.B., Lee, S.J., Lo, G.-Q., Kwong, D.-L. (2008-05). Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations. IEEE Electron Device Letters 29 (5) : 445-448. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920277|
|Abstract:||Si-waveguide-integrated lateral Ge p-i-n photodetectors using novel Si/ SiGe buffer and two-step Ge-process are demonstrated for the first time. Comparative analysis between lateral Ge p-i-n and vertical p-Si/i-Ge/ n-Ge p-i-n is made. Light is evanescently coupled from Si waveguide to the overlaying Ge-detector, achieving high responsivity of 1.16 A/W at 1550 nm with f3db bandwidth of 3.4 GHz for lateral Ge p-i-n detector at 5 V reverse bias. In contrast, vertical p-Si/i-Ge/n-Ge p-i-n has lower responsivity of 0.29 A/W but higher bandwidth of 5.5 GHz at 5 V bias. The higher responsivity of lateral p-i-n detectors is attributed to smaller optical mode overlap with highly doped Ge region as in vertical p-i-n configuration. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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