Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0304-8853(03)00492-X
Title: Epitaxial growth of ferromagnetic Co:TiO2 thin films by co-sputtering
Authors: Han, G.C.
Wu, Y.H. 
Tay, M.
Li, K.B.
Guo, Z.B.
Chong, T.C.
Keywords: Epitaxial growth
Magnetism
Semiconductors
Sputtering
Titanium oxide
Issue Date: Jan-2004
Source: Han, G.C., Wu, Y.H., Tay, M., Li, K.B., Guo, Z.B., Chong, T.C. (2004-01). Epitaxial growth of ferromagnetic Co:TiO2 thin films by co-sputtering. Journal of Magnetism and Magnetic Materials 268 (1-2) : 159-164. ScholarBank@NUS Repository. https://doi.org/10.1016/S0304-8853(03)00492-X
Abstract: Epitaxial anatase Co:TiO2 thin films were grown on LaAlO 3 (0 0 1) substrates by co-sputtering method. Structural and compositional properties were measured as a function of deposition parameters to explore the growth mechanism of the anatase films. Epitaxial anatase structure can be obtained at deposition temperatures ranged from 500 °C to 750 °C. magnetization measurements show that the saturation magnetization (Ms) increases as deposition temperature increases. At 750 °C, Ms is about 1.13 μB/Co. X-ray diffraction results show that the sample has a superior anatase crystallinity with the full-width at half-maximum of 0.13 °. It was found that Ms is directly related with the crystallinity, i.e., Ms increases as the crystallinity of samples improves. © 2003 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/82298
ISSN: 03048853
DOI: 10.1016/S0304-8853(03)00492-X
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