Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2003.12.052
Title: Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer
Authors: Chen, C.
Teo, K.L. 
Chong, T.C. 
Wu, Y.H. 
Osipowicz, T. 
Anisur Rahman, Md.
Keywords: A1. Reflection high energy electron diffraction
A3. Molecular beam epitaxy
B1. Sulfides
B2. Semiconducting II-VI materials
Issue Date: 15-Mar-2004
Citation: Chen, C., Teo, K.L., Chong, T.C., Wu, Y.H., Osipowicz, T., Anisur Rahman, Md. (2004-03-15). Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer. Journal of Crystal Growth 264 (1-3) : 58-63. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2003.12.052
Abstract: We report the growth and characterization of Zn0.05Sr 0.95S codoped with europium and samarium ions. The material was grown on α-MnS (rocksalt) buffer layer on (001)MgO substrate, using solid-source molecular-beam epitaxy technique. Characterization by reflection high-energy electron diffraction, atomic force microscopy, Rutherford back-scattering spectrometry and X-ray diffraction results provide clear evidence that a good stoichiometric film with crystalline single-phase rocksalt α-Zn0.05Sr0.95S can be obtained at high substrate temperature without sulfur deficiency. Intense infrared-stimulated luminescence (ISL) with a peak at 612nm is observed in α-Zn0.05Sr 0.95S:Eu, Sm which is stimulated with infrared light after irradiation with visible light. The ISL result shows that the α-Zn 0.05Sr0.95S:Eu and Sm can be developed for erasable and rewritable optical memory. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/82297
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2003.12.052
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