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|Title:||Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer|
Anisur Rahman, Md.
|Keywords:||A1. Reflection high energy electron diffraction|
A3. Molecular beam epitaxy
B2. Semiconducting II-VI materials
|Source:||Chen, C., Teo, K.L., Chong, T.C., Wu, Y.H., Osipowicz, T., Anisur Rahman, Md. (2004-03-15). Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layer. Journal of Crystal Growth 264 (1-3) : 58-63. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2003.12.052|
|Abstract:||We report the growth and characterization of Zn0.05Sr 0.95S codoped with europium and samarium ions. The material was grown on α-MnS (rocksalt) buffer layer on (001)MgO substrate, using solid-source molecular-beam epitaxy technique. Characterization by reflection high-energy electron diffraction, atomic force microscopy, Rutherford back-scattering spectrometry and X-ray diffraction results provide clear evidence that a good stoichiometric film with crystalline single-phase rocksalt α-Zn0.05Sr0.95S can be obtained at high substrate temperature without sulfur deficiency. Intense infrared-stimulated luminescence (ISL) with a peak at 612nm is observed in α-Zn0.05Sr 0.95S:Eu, Sm which is stimulated with infrared light after irradiation with visible light. The ISL result shows that the α-Zn 0.05Sr0.95S:Eu and Sm can be developed for erasable and rewritable optical memory. © 2004 Elsevier B.V. All rights reserved.|
|Source Title:||Journal of Crystal Growth|
|Appears in Collections:||Staff Publications|
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