Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1795251
Title: Enhancement of adhesion strength of Cu seed layer with different thickness in Cu/low-k multilevel interconnects
Authors: Wang, G.
Jong, Y.W. 
Balakumar, S.
Seah, C.H.
Hara, T.
Issue Date: Sep-2004
Citation: Wang, G., Jong, Y.W., Balakumar, S., Seah, C.H., Hara, T. (2004-09). Enhancement of adhesion strength of Cu seed layer with different thickness in Cu/low-k multilevel interconnects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (5) : 2384-2390. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1795251
Abstract: Cu seed layer deposited with two different thicknesses, and subsequent annealing to enhance the adhesion strength to avoid peeling and delamination in Cu/low-dielectric constant multilevel interconnects were investigated. Emphasis was laid on the relation between thermal stability of Cu seeds at low and high annealing temperatures of 100 and 300°C, respectively, with seed thicknesses below 1000 Å. The impact on adhesion strength and the microstructure evolution of coupling effect of thin Cu seed layers and low annealing temperatures were also studied. Minimal agglomeration of the Cu seed layer and stronger bonding at the Ta/Cu interfaces, was observed, which indicated higher reliability for Cu damascene structure .
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/82291
ISSN: 10711023
DOI: 10.1116/1.1795251
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

40
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.