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|Title:||Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner|
Silicon nitride liner
Silicon-carbon (Si1-y Cy)
|Citation:||Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-04). Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner. IEEE Electron Device Letters 28 (4) : 301-304. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.893221|
|Abstract:||We report the demonstration of 25-nm gate-length LG strained nMOSFETs featuring the silicon-carbon source and drain (Si1-yC yS/D) regions and a thin-body thickness Tbody of ∼18 nm. This is also the smallest reported planar nMOSFET with the Si1-y Cy S/D stressors. Strain-induced mobility enhancement due to the Si1-yC., leads to a significant drive-current IDsat enhancement of 52% over the control transistor. Furthermore, the integration of tensile-stress SiN etch stop layer and Si1-yCy/D extends the IDsat enhancement to 67%. The performance enhancement was achieved for the devices with similar subthreshold swing and drain-induced barrier lowering. The Si1-yCy S/D technology and its combination with the existing strained-silicon techniques are promising for the future highperformance CMOS applications. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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