Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.893221
Title: Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
Authors: Ang, K.-W.
Chui, K.-J.
Tung, C.-H.
Balasubramanian, N.
Li, M.-F. 
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Electron mobility
nMOSFET
Silicon nitride liner
Silicon-carbon (Si1-y Cy)
Strain
Stress
Issue Date: Apr-2007
Source: Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-04). Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner. IEEE Electron Device Letters 28 (4) : 301-304. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.893221
Abstract: We report the demonstration of 25-nm gate-length LG strained nMOSFETs featuring the silicon-carbon source and drain (Si1-yC yS/D) regions and a thin-body thickness Tbody of ∼18 nm. This is also the smallest reported planar nMOSFET with the Si1-y Cy S/D stressors. Strain-induced mobility enhancement due to the Si1-yC., leads to a significant drive-current IDsat enhancement of 52% over the control transistor. Furthermore, the integration of tensile-stress SiN etch stop layer and Si1-yCy/D extends the IDsat enhancement to 67%. The performance enhancement was achieved for the devices with similar subthreshold swing and drain-induced barrier lowering. The Si1-yCy S/D technology and its combination with the existing strained-silicon techniques are promising for the future highperformance CMOS applications. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82289
ISSN: 07413106
DOI: 10.1109/LED.2007.893221
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