Please use this identifier to cite or link to this item:
|Title:||Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN|
|Citation:||Soh, C.B., Liu, W., Hartono, H., Ang, N.S.S., Chua, S.J., Chow, S.Y., Tay, C.B., Vajpeyi, A.P. (2011-05-09). Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN. Applied Physics Letters 98 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3589969|
|Abstract:||Phosphor-free amber light emitting quantum dots with bimodal size distribution have been effectively incorporated in InGaN/GaN light emitting diodes (LEDs). With overgrowth of the LEDs structure on electrochemically etched nanoporous GaN templates, a reduction in density of threading dislocations and lower biaxial stress are achieved. A higher density of smaller quantum dots ∼4.5× 109 cm-2 is incorporated in the multiple quantum well of LEDs on the nanoporous GaN template, generating higher energy emission, and enhanced light output by 1.45 times over LEDs grown on conventional GaN. The carrier capture kinetic by the bimodal distributed quantum dots is discussed with its energy band profile. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 19, 2018
WEB OF SCIENCETM
checked on Jun 11, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.