Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1889247
Title: Electronic properties of half metallic Fe 3O 4 films
Authors: Jain, S. 
Adeyeye, A.O. 
Boothroyd, C.B.
Issue Date: 1-May-2005
Citation: Jain, S., Adeyeye, A.O., Boothroyd, C.B. (2005-05-01). Electronic properties of half metallic Fe 3O 4 films. Journal of Applied Physics 97 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1889247
Abstract: A systematic study of the electronic properties of Fe3 O4 films grown directly on Si(001) substrates and on Ta, Ti, and Si O2 buffer layers using electron beam deposition is presented. The effect of the buffer layer on the Verwey transition temperature and on the current-voltage characteristics of Fe3 O4 has been studied in detail. We observed that for a fixed Fe3 O4 film thickness, the Verwey transition temperature is strongly dependent on the buffer layer materials. Transmission electron microscopy reveals that the growth mechanism of the Fe3 O4 films is strongly dependent on the type of buffer layer used. The contribution of long range and short range charge ordering below the transition temperature has also been investigated. We observed an insulator-like gap structure in the density of states below the transition temperature which gradually disappears with increasing temperature. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82270
ISSN: 00218979
DOI: 10.1063/1.1889247
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