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|Title:||Electronic and vibronic properties of n-type GaN: The influence of etching and annealing|
|Authors:||Tripathy, S. |
|Citation:||Tripathy, S., Chua, S.J., Ramam, A. (2002-05-06). Electronic and vibronic properties of n-type GaN: The influence of etching and annealing. Journal of Physics Condensed Matter 14 (17) : 4461-4476. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/14/17/317|
|Abstract:||We have investigated optical properties of the GaN etched surface using uv-micro-photoluminescence (PL) and micro-Raman scattering. The effects of wet chemical treatment (HCl and KOH) and Cl2-based inductively coupled plasma etching on optical properties of n-type GaN have been studied. The damage introduced by dry etching was assessed and improvement of the band-edge PL was observed during post-etch annealing of the samples. The surface stoichiometry of the GaN surfaces subjected to different processing steps has been analysed based on the results of x-ray photoelectron spectroscopy. The atomic force microscopy technique is employed to investigate the surface morphology. Apart from phonons of GaN, Raman spectra also show impurity-induced local vibrational modes. In addition, electronic Raman peaks were observed in the low-frequency region. We have also carried out micro-Raman and PL measurements to investigate optical properties of n-type GaN annealed under different conditions. Biaxial strain and phonon lifetimes have been estimated in GaN subjected to various processing conditions.|
|Source Title:||Journal of Physics Condensed Matter|
|Appears in Collections:||Staff Publications|
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