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Title: Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
Authors: Tripathy, S. 
Chua, S.J. 
Ramam, A.
Issue Date: 6-May-2002
Citation: Tripathy, S., Chua, S.J., Ramam, A. (2002-05-06). Electronic and vibronic properties of n-type GaN: The influence of etching and annealing. Journal of Physics Condensed Matter 14 (17) : 4461-4476. ScholarBank@NUS Repository.
Abstract: We have investigated optical properties of the GaN etched surface using uv-micro-photoluminescence (PL) and micro-Raman scattering. The effects of wet chemical treatment (HCl and KOH) and Cl2-based inductively coupled plasma etching on optical properties of n-type GaN have been studied. The damage introduced by dry etching was assessed and improvement of the band-edge PL was observed during post-etch annealing of the samples. The surface stoichiometry of the GaN surfaces subjected to different processing steps has been analysed based on the results of x-ray photoelectron spectroscopy. The atomic force microscopy technique is employed to investigate the surface morphology. Apart from phonons of GaN, Raman spectra also show impurity-induced local vibrational modes. In addition, electronic Raman peaks were observed in the low-frequency region. We have also carried out micro-Raman and PL measurements to investigate optical properties of n-type GaN annealed under different conditions. Biaxial strain and phonon lifetimes have been estimated in GaN subjected to various processing conditions.
Source Title: Journal of Physics Condensed Matter
ISSN: 09538984
DOI: 10.1088/0953-8984/14/17/317
Appears in Collections:Staff Publications

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