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|Title:||Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics|
|Authors:||Wang, S.J. |
|Citation:||Wang, S.J., Ong, C.K., Xu, S.Y., Chen, P., Tjiu, W.C., Huan, A.C.H., Yoo, W.J., Lim, J.S., Feng, W., Choi, W.K. (2001-03). Electrical properties of crystalline YSZ films on silicon as alternative gate dielectrics. Semiconductor Science and Technology 16 (3) : L13-L16. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/16/3/101|
|Abstract:||Crystalline yttria-stabilized zirconia oxide (YSZ) film was successfully deposited on a silicon wafer without an interfacial amorphous SiO2 layer. The film with equivalent oxide thickness teox down to 1.77 nm shows negligible hysteresis and low interface state density, less than 3 × 1011 cm-2 eV-1. The leakage current density for teox = 1.77 nm film, 1.5 × 10-5 A cm-2 at 1 V bias voltage, is five orders of magnitude lower than that for SiO2 with the same equivalent oxide thickness. The results demonstrate that an ultra-thin YSZ film has sufficient resistivity against the formation of an underlying amorphous layer, and can be a promising gate dielectric replacing SiO2 to reduce the feature size of devices.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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