Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2004.840128
Title: Effects of temperature, deposition conditions, and magnetic field on Ni 80Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co and Ni 80Fe 20/Al 2O 3/Co magnetic tunnel junctions
Authors: Chen, F.H.
Ng, V. 
Keywords: Exchange bias
Magnetic field sputtering
Magnetic tunnel junctions
Post-deposition magnetic annealing
Issue Date: Jan-2005
Source: Chen, F.H., Ng, V. (2005-01). Effects of temperature, deposition conditions, and magnetic field on Ni 80Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co and Ni 80Fe 20/Al 2O 3/Co magnetic tunnel junctions. IEEE Transactions on Magnetics 41 (1 I) : 116-121. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2004.840128
Abstract: We fabricated magnetic tunnel junctions (MTJs) of Ni 80 Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co exchange-biased structures and Ni 80Fe 20/Al 2O 3/Co nonexchange-biased structures using shadow masks, with and without an in situ magnetic field. We magnetically annealed the junctions at 230°C for 15 min after deposition. Low-temperature measurements revealed an increase injunction resistance and tunneling magnetoresistance and enhancement of the exchange field for exchange-biased junctions. Post-deposition magnetic annealing at an optimum predicted temperature did not improve the quality of the Al 2O 3 but instead degraded it, highlighting the importance of other contributing factors. MTJs fabricated with an in situ magnetic field without any post-deposition magnetic annealing produced the most desirable results from the perspective of magnetic application technology.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/82238
ISSN: 00189464
DOI: 10.1109/TMAG.2004.840128
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