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|Title:||Effects of temperature, deposition conditions, and magnetic field on Ni 80Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co and Ni 80Fe 20/Al 2O 3/Co magnetic tunnel junctions|
Magnetic field sputtering
Magnetic tunnel junctions
Post-deposition magnetic annealing
|Citation:||Chen, F.H., Ng, V. (2005-01). Effects of temperature, deposition conditions, and magnetic field on Ni 80Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co and Ni 80Fe 20/Al 2O 3/Co magnetic tunnel junctions. IEEE Transactions on Magnetics 41 (1 I) : 116-121. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2004.840128|
|Abstract:||We fabricated magnetic tunnel junctions (MTJs) of Ni 80 Fe 20/Fe 50Mn 50/Ni 80Fe 20/Al 2O 3/Co exchange-biased structures and Ni 80Fe 20/Al 2O 3/Co nonexchange-biased structures using shadow masks, with and without an in situ magnetic field. We magnetically annealed the junctions at 230°C for 15 min after deposition. Low-temperature measurements revealed an increase injunction resistance and tunneling magnetoresistance and enhancement of the exchange field for exchange-biased junctions. Post-deposition magnetic annealing at an optimum predicted temperature did not improve the quality of the Al 2O 3 but instead degraded it, highlighting the importance of other contributing factors. MTJs fabricated with an in situ magnetic field without any post-deposition magnetic annealing produced the most desirable results from the perspective of magnetic application technology.|
|Source Title:||IEEE Transactions on Magnetics|
|Appears in Collections:||Staff Publications|
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