Please use this identifier to cite or link to this item:
|Title:||Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric|
Sulfur (S) passivation
|Citation:||Xie, R., Zhu, C. (2007-11). Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric. IEEE Electron Device Letters 28 (11) : 976-979. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.907415|
|Abstract:||In this letter, we study the effects of sulfur (S) passivation, using aqueous ammonium sulfide ((NH4)2), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode. Compared with control samples, the S passivation can effectively reduce both equivalent oxide thickness and interface-state density. X-ray-photoelectron-spectroscopy analysis shows that (NH4)2S treatment can reduce the Ge-O bonds on Ge surface. The thermal stability of the S passivation under different postmetal-annealing temperatures was also examined, and it was found that samples with (NH4)2S treatment exhibit stable Ge/high-k interface upon 550-°C postmetal-deposition annealing, whereas interface quality degrades for those samples without S passivation. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 23, 2019
WEB OF SCIENCETM
checked on Jan 15, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.