Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.907415
Title: Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric
Authors: Xie, R.
Zhu, C. 
Keywords: Germanium (Ge)
MOS capacitor
Sulfur (S) passivation
Issue Date: Nov-2007
Citation: Xie, R., Zhu, C. (2007-11). Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric. IEEE Electron Device Letters 28 (11) : 976-979. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.907415
Abstract: In this letter, we study the effects of sulfur (S) passivation, using aqueous ammonium sulfide ((NH4)2), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode. Compared with control samples, the S passivation can effectively reduce both equivalent oxide thickness and interface-state density. X-ray-photoelectron-spectroscopy analysis shows that (NH4)2S treatment can reduce the Ge-O bonds on Ge surface. The thermal stability of the S passivation under different postmetal-annealing temperatures was also examined, and it was found that samples with (NH4)2S treatment exhibit stable Ge/high-k interface upon 550-°C postmetal-deposition annealing, whereas interface quality degrades for those samples without S passivation. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82237
ISSN: 07413106
DOI: 10.1109/LED.2007.907415
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