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|Title:||Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric|
Sulfur (S) passivation
|Citation:||Xie, R., Zhu, C. (2007-11). Effects of sulfur passivation on germanium MOS capacitors With HfON gate dielectric. IEEE Electron Device Letters 28 (11) : 976-979. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.907415|
|Abstract:||In this letter, we study the effects of sulfur (S) passivation, using aqueous ammonium sulfide ((NH4)2), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode. Compared with control samples, the S passivation can effectively reduce both equivalent oxide thickness and interface-state density. X-ray-photoelectron-spectroscopy analysis shows that (NH4)2S treatment can reduce the Ge-O bonds on Ge surface. The thermal stability of the S passivation under different postmetal-annealing temperatures was also examined, and it was found that samples with (NH4)2S treatment exhibit stable Ge/high-k interface upon 550-°C postmetal-deposition annealing, whereas interface quality degrades for those samples without S passivation. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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