Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.132
Title: Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-Gan
Authors: Lim, J.
Chor, E.F. 
Tan, L.S. 
Keywords: O2 anneal
Ohmic contact
p-GaN
Surface treatment
Issue Date: 26-Mar-2007
Citation: Lim, J., Chor, E.F., Tan, L.S. (2007-03-26). Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-Gan. Thin Solid Films 515 (10) : 4471-4475. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.132
Abstract: The effects of boiling Aqua Regia (AQ), N2/Cl2 plasma followed by AQ and O2 plasma followed by AQ surface treatments prior to Ni/Au (20 nm/20 nm) metallization to p-GaN:Mg (∼ 3 × 1017 cm- 3) have been investigated. N2/Cl2 plasma was employed in a bid to lower the Ga/N and O/Ga ratios of the GaN surface to improve the contact properties to p-GaN, while O2 plasma was employed as an alternative to incorporate O into the Ni/Au system. Results show that a low Ga/N ratio does not necessarily correspond to a better contact. The positive effect of O2 over N2 anneal is observed only for the AQ-treated sample, although the mechanisms responsible for its positive effect: NiO formation and Ni/Au layer-reversal were observed for all O2-annealed contacts. We conclude that the effect of O2 anneal on the Ni/Au contact is dependant on the p-GaN surface prior to metallization. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82223
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.132
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