Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2015970
Title: Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stack
Authors: Yang, J.-J.
Chen, J.-D. 
Wise, R.
Steinmann, P.
Yu, M.-B.
Kwong, D.-L.
Li, M.-F.
Yeo, Y.-C. 
Zhu, C. 
Keywords: Canceling effect
Capacitor
Mmetal-insulator-metal (MIM)
Quadratic voltage coefficient of capacitance (VCC)
SiO2
Sm2O3
Issue Date: 2009
Source: Yang, J.-J., Chen, J.-D., Wise, R., Steinmann, P., Yu, M.-B., Kwong, D.-L., Li, M.-F., Yeo, Y.-C., Zhu, C. (2009). Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stack. IEEE Electron Device Letters 30 (5) : 460-462. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2015970
Abstract: We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3SiO2 stacked dielectrics for precision analog circuit applications. By using the "canceling effect" of the positive quadratic voltage coefficient of capacitance (VCC) of Sm2O3 and the negative quadratic VCC of SiO2, MIM capacitors with capacitance density exceeding 7.3 fF/μm2, quadratic VCC of around -502, and leakage current density of 1 × 10-7 A/cm2 at +3.3 V are successfully demonstrated. The obtained capacitance density and quadratic VCC satisfy the technical requirements specified in the International Technology Roadmap for Semiconductors through the year 2013 for MIM capacitors to be used in precision analog circuit applications. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82216
ISSN: 07413106
DOI: 10.1109/LED.2009.2015970
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