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|Title:||Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers|
|Source:||Samanta, S.K., Maikap, S., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2001-08). Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers. Semiconductor Science and Technology 16 (8) : 704-707. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/16/8/312|
|Abstract:||Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (Dit) and gate voltage shift (Δ VG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.|
|Source Title:||Semiconductor Science and Technology|
|Appears in Collections:||Staff Publications|
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