Please use this identifier to cite or link to this item: https://doi.org/8/312
Title: Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers
Authors: Samanta, S.K.
Maikap, S.
Bera, L.K. 
Banerjee, H.D.
Maiti, C.K.
Issue Date: Aug-2001
Source: Samanta, S.K.,Maikap, S.,Bera, L.K.,Banerjee, H.D.,Maiti, C.K. (2001-08). Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers. Semiconductor Science and Technology 16 (8) : 704-707. ScholarBank@NUS Repository. https://doi.org/8/312
Abstract: Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (Dit) and gate voltage shift (Δ VG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82204
ISSN: 02681242
DOI: 8/312
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