Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1428410
Title: Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization
Authors: Gan, C.L.
Thompson, C.V.
Pey, K.L. 
Choi, W.K. 
Tay, H.L.
Yu, B.
Radhakrishnan, M.K.
Issue Date: 31-Dec-2001
Citation: Gan, C.L., Thompson, C.V., Pey, K.L., Choi, W.K., Tay, H.L., Yu, B., Radhakrishnan, M.K. (2001-12-31). Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization. Applied Physics Letters 79 (27) : 4592-4594. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1428410
Abstract: Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology. © 2001 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82194
ISSN: 00036951
DOI: 10.1063/1.1428410
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