Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2006.05.023
Title: Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
Authors: Zhu, S. 
Li, M.F. 
Keywords: Schottky barrier height
Schottky barrier source/drain
Silicide
Strained-Si
Issue Date: Jul-2006
Citation: Zhu, S., Li, M.F. (2006-07). Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction. Solid-State Electronics 50 (7-8) : 1337-1340. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2006.05.023
Abstract: Due to an extra barrier between source and channel, the drivability of Schottky barrier source/drain MOSFETs (SBMOSFETs) is smaller than that of conventional transistors. To reach the drivability comparable to the conventional MOSFET, the Schottky barrier height (SBH) should be lower than a critical value. It is expected that SBH can be effectively reduced by a bi-axially strain on Si. In this letter, p-channel MOSFETs with PtSi Schottky barrier source/drain, HfAlO gate dielectric, HfN/TaN metal gate and strained-Si channel are demonstrated for the first time using a simplified low temperature process. Devices with the channel length of 4 μm have the drain current of 9.5 μA/μm and the transconductance of 14 μS/μm at Vgs - Vth = Vds = -1 V. Compared to the cubic Si counterpart, the drain current and the transconductance are improved up to 2.7 and 3.1 times respectively. The improvement is believed to arising from the reduced barrier height of the PtSi/strained-Si contact and the enhanced hole mobility in the strained-Si channel. © 2006 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/82175
ISSN: 00381101
DOI: 10.1016/j.sse.2006.05.023
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