Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1369396
Title: Dislocation dynamics of strain relaxation in epitaxial layers
Authors: Wang, T.C.
Zhang, Y.W. 
Chua, S.J. 
Issue Date: Jun-2001
Citation: Wang, T.C., Zhang, Y.W., Chua, S.J. (2001-06). Dislocation dynamics of strain relaxation in epitaxial layers. Journal of Applied Physics 89 (11 I) : 6069-6072. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1369396
Abstract: Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations is the incorporation of dislocation interactions into the kinetic process by introducing a resistance term. The resistance to threading dislocation gliding is characterized by a hardening function, which depends only on the relaxed plastic strain. The evolution equations are tested on the GexSi1 - x/Si(100) materials system. Existing fundamental parameters are incorporated into the present model. The evolution equations successfully reproduce a wide range of experimental data on strain relaxation in GexSi1 - x/Si heterostructures. © 2001 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82163
ISSN: 00218979
DOI: 10.1063/1.1369396
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